Reliability of Thin Oxides Grown on Deuterium Implanted Silicon Substrate
نویسندگان
چکیده
We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of1 10 /cm at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.
منابع مشابه
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تاریخ انتشار 2001